View RUR040N02_5061241.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RUR040N02
Transistors
1.5V Drive Nch MOSFET
RUR040N02
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSMT3
Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3).
(1) Gate (2) Source (3) Drain
Each lead has same dimensions Abbreviated symbol : XF
Application Switching Equivalent circuit
Taping TL 3000
(1) 1 2 (3)
Packaging specifications
Package Type RUR040N02 Code Basic ordering unit (pieces)
(2) 1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Gate (2) Source (3) Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits 20 10 4.0 8.0 0.8 8.0 1.0 150 -55 to +150 Unit V V A A A A W C C
Total power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
Thermal resistance
Parameter Channel to ambient
Mounted on a ceramic board
Symbol Rth (ch-a)
Limits 125
Unit C / W
1/4
RUR040N02
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
RDS (on)
Min. - 20 - 0.3 - - - - 5.0 - - - - - - - - - -
Typ. - - - - 25 33 42 55 - 680 150 90 10 30 50 60 8 1.8 1.3
Max. 10 - 1 1.3 35 46 59 110 - - - - - - - - - - -
Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 4.0A, VGS= 4.5V ID= 4.0A, VGS= 2.5V ID= 2.0A, VGS= 1.8V ID= 0.8A, VGS= 1.5V VDS= 10V, ID= 4.0A VDS= 10V VGS=0V f=1MHz ID= 2.0A, VDD 10V VGS= 4.5V RL 5, RG=10 ID= 4.0A, VDD 10V VGS= 4.5V RL 2.5, RG=10
Yfs Ciss Coss Crss td (on)
tr td (off) tf Qg Qgs Qgd

Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS= 0.8A, VGS=0V
2/4
RUR040N02
Transistors
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10 VDS=10V Pulsed
1000
VGS=4.5V Pulsed
1000
VGS=2.5V Pulsed
DRAIN CURRENT : ID (A)
1
Ta=125C Ta=75C Ta=25C Ta=-25C
0.1
100
Ta=125C Ta=75C Ta=25C Ta=-25C
100
Ta=125C Ta=75C Ta=25C Ta=-25C
0.01
0.001 0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10 0.01
0.1
1
10
10 0.01
0.1
1
10
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VGS=1.8V Pulsed
VGS=1.5V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000
1000
1000
Ta=25C Pulsed
100
Ta=125C Ta=75C Ta=25C Ta=-25C
Ta=125C Ta=75C Ta=25C Ta=-25C
100
100
VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V
10 0.01
0.1
1
10
10 0.01
0.1
1
10
10 0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ()
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ( )
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( )
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
100 ID=4.0A 80 ID=2.0A
Ta=25C Pulsed
10
SOURCE CURRENT : IS (A)
1
CAPACITANCE : C (pF)
Ta=125C Ta=75C Ta=25C Ta=-25C
VGS=0V Pulsed
10000
Ta=25C f=1MHz VGS=0V
1000 Ciss
60
40
0.1
100
Coss Crss
20
0 0 5 10
0.01 0.0
0.5
1.0
1.5
10 0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voletage
Fig.8 Source Current vs. Source-Drain Voltage
Fig.9 Typical Capacitance vs. Drain-Source Voltage
3/4
RUR040N02
Transistors
FORWARD TRANSFER ADMITTANCE Yfs (S)
100
10000 6
GATE-SOURCE VOLTAGE : VGS (V)
SWITCHING TIME : t (ns)
1000
Ta=25C VDD=10V VGS=4.5V RG=10 Pulsed
tf
100
4
Ta=25C VDD=10V ID=4.0V RG=10 Pulsed
VDS=10V Pulsed
Ta=-25C Ta=25C Ta=75C Ta=125C
10
td(off)
10
1
td(on) tr
2
1 0.01
0 0.1 1 10 0 1 2 3 4 5 6 7 8 9 10 11
0.1 0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Switching Characteristics
Fig.11 Dynamic Input Characteristics
Fig.12 Forward Transfer Admittance vs. Drain Current
Measurement circuits
Pulse Width
VGS
ID RL D.U.T.
VDS
VGS VDS 50% 10% 10%
90%
50% 10%
RG VDD
td(on) ton 90% tr td(off) toff 90% tr
Fig.13 Switching Time Test Circuit
Fig.14 Switching Time Waveforms
VG
VGS
ID RL
VDS
VGS Qgs
Qg
IG (Const.) D.U.T. RG VDD
Qgd
Charge
Fig.15 Gate Charge Test Circuit
Fig.16 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
www.rohm.com
Copyright (c) 2008 ROHM CO.,LTD.
THE AMERICAS / EUROPE / ASIA / JAPAN
Contact us : webmaster@ rohm.co. jp
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
TEL : +81-75-311-2121 FAX : +81-75-315-0172
Appendix1-Rev2.0

▲Up To Search▲

Price & Availability of RUR040N02

	To Download RUR040N02 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .